Defects in surface treated film and their prevention (IV) - Classification by micro-observation for the defects (peeling, cracks)
نویسندگان
چکیده
منابع مشابه
Investigation of Defects in Ferro-Tic Composites and their Prevention
The effective parameters that influence in situ cast ferroTic composites were investigated. Centrifugal casting of specimens was carried out using ceramic & metallic molds. OM, SEM and XRD techniques were used to examine the existence of flows in the specimens. Results show that the control of chemical composition, processing, cooling rate and heat treatment has 
a promising effect on the qu...
متن کاملInvestigation of Defects in Ferro-Tic Composites and their Prevention
The effective parameters that influence in situ cast ferroTic composites were investigated. Centrifugal casting of specimens was carried out using ceramic & metallic molds. OM, SEM and XRD techniques were used to examine the existence of flows in the specimens. Results show that the control of chemical composition, processing, cooling rate and heat treatment has a promising effect on the qual...
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In recent years, there has been increased interest in using microphaseseparated block copolymer thin films as submicrometer/suboptical masks in next generation semiconductor and magnetic media fabrication. With the goals of removing metastable defects in block copolymer thin film simulations and potentially examining equilibrium defect populations, we report on two new numerical techniques that...
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this thesis is based upon the works of samuel beckett. one of the greatest writers of contemporary literature. here, i have tried to focus on one of the main themes in becketts works: the search for the real "me" or the real self, which is not only a problem to be solved for beckett man but also for each of us. i have tried to show becketts techniques in approaching this unattainable goal, base...
15 صفحه اولObservation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.
The scanning tunneling microscope is used to study arsenic-related point defects in low-temperaturegrown GaAs. Tunneling spectroscopy reveals a band of donor states located near E„+0. 5 eV arising from the defects. Images of this state reveal a central defect core, with two satellites located about 15 A from the core. The structure of the defect is found to be consistent with that of an isolate...
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ژورنال
عنوان ژورنال: Jitsumu Hyomen Gijutsu
سال: 1984
ISSN: 1884-3417,0368-2358
DOI: 10.4139/sfj1970.31.390